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| DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. PINNING 1= 2= 3= source gate drain 1 handbook, halfpage 2 3 g MAM388 J174; J175; J176; J177 d s Note: Drain and source are interchangeable. Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Gate current Total power dissipation up to Tamb = 50 C Ptot max. J174 Drain current -VDS = 15 V; VGS = 0 Drain-source ON-resistance -VDS = 0.1 V; VGS = 0 RDS on max. 85 125 250 300 -IDSS min. max. 20 135 7 70 2 35 1.5 20 mA mA 400 J175 J176 J177 mW VDS VGSO -IG max. max. max. 30 30 50 V V mA April 1995 2 Philips Semiconductors Product specification P-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Gate current (DC) Total power dissipation up to Tamb = 50 C Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified Gate cut-off current VGS = 20 V; VDS = 0 Drain cut-off current -VDS = 15 V; VGS = 10 V Drain current -VDS = 15 V; VGS = 10 V Gate-source breakdown voltage IG = 1 A; VDS = 0 Gate-source cut-off voltage -ID = 10 nA; VDS = -15 V Drain-source ON-resistance -VDS = 0.1 V; VGS = 0 RDSon max. 85 125 VGS off min. max. 5 10 3 6 V(BR)GSS min. 30 30 -IDSS min. max. 20 135 7 70 -IDSX max. 1 1 IGSS max. 1 1 J174 J175 Rth j-a = Ptot Tstg Tj max. max. VDS VGSO VGDO -IG max. max. max. max. J174; J175; J176; J177 30 30 30 50 400 -65 to +150 150 V V V mA mW C C 250 K/W J176 J177 1 1 2 35 30 1 4 250 1 nA 1 nA 1.5 mA 20 mA 30 V 0.8 V 2.25 V 300 April 1995 3 Philips Semiconductors Product specification P-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise specified Input capacitance, f = 1 MHz VGS = 10 V; VDS = 0 V VGS = VDS = 0 Feedback capacitance, f = 1 MHz VGS = 10 V; VDS = 0 V Switching times (see Fig.2 + 3) Delay time Rise time Turn-on time Storage time Fall time Turn-off time Test conditions: td tr ton ts tf toff -VDD VGS off RL VGS on typ. typ. typ. typ. typ. typ. Crs typ. J174 2 5 7 5 10 15 10 12 560 0 4 J175 5 10 15 10 20 30 6 8 1200 0 Cis Cis typ. typ. 8 30 J174; J175; J176; J177 pF pF pF J176 J177 15 20 35 15 20 35 6 6 0 20 ns 25 ns 45 ns 20 ns 25 ns 45 ns 6V 3V 0V 2000 2900 handbook, halfpage -VDD 50 Vout RL Vin 50 MBK292 VGSoff INPUT 10% 90% 10% OUTPUT 90% tf ts td 10% D.U.T 90% tr MBK293 Fig.2 Switching times test circuit. Fig.3 Input and output waveforms; td + tr = ton ; ts + tf = toff. April 1995 4 Philips Semiconductors Product specification P-channel silicon field-effect transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads J174; J175; J176; J177 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 April 1995 5 Philips Semiconductors Product specification P-channel silicon field-effect transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values J174; J175; J176; J177 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6 |
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